Title:
半導体装置の作製方法
Document Type and Number:
Japanese Patent JP4519400
Kind Code:
B2
More Like This:
Inventors:
Chiho Kokubo
Aiko Shiga
Shunpei Yamazaki
Hidekazu Miyairi
Koji Dairiki
Kenji Kasahara
Akihisa Shimomura
Aiko Shiga
Shunpei Yamazaki
Hidekazu Miyairi
Koji Dairiki
Kenji Kasahara
Akihisa Shimomura
Application Number:
JP2002357190A
Publication Date:
August 04, 2010
Filing Date:
December 09, 2002
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G02F1/1368; H01L21/20; H01L21/336; H01L29/786
Domestic Patent References:
| JP2000277450A | ||||
| JP59046021A | ||||
| JP2000077353A | ||||
| JP9027453A | ||||
| JP2000150377A | ||||
| JP10289876A | ||||
| JP2001291666A | ||||
| JP58156591A | ||||
| JP2003100628A | ||||
| JP7130652A | ||||
| JP8078329A | ||||
| JP10135468A | ||||
| JP10135469A | ||||
| JP2001274110A |
Other References:
Y. Helen, et al.,"High mobility thin film transistors by Nd : YVO4-laser crystallization",THIN SOLID FILMS,2001年 2月15日,Vol. 383, No. 1-2,pp. 143-146
Y. F. Tang, et al.,"Super sequential lateral growth of Nd : YAG laser crystallized hydrogenated amorphous silicon",APPLIED PHYSICS LETTERS,2001年 1月 8日,Vol. 78, No. 2,pp. 186-188
Y. F. Tang, et al.,"Super sequential lateral growth of Nd : YAG laser crystallized hydrogenated amorphous silicon",APPLIED PHYSICS LETTERS,2001年 1月 8日,Vol. 78, No. 2,pp. 186-188