半導体装置の作製方法 - Semiconductor Energy Laboratory Co., Ltd.

Title:

半導体装置の作製方法

Document Type and Number:

Japanese Patent JP5371143

Kind Code:

B2

Abstract:

To provide a method for manufacturing a display device which is capable of improving material use efficiency and of simplifying manufacturing processes.

In this method for manufacturing a display device, a tube is disposed on a region of an insulating layer where an opening is to be formed, and a processing agent (etching gas or etching liquid) is discharged onto the insulating layer. The insulating layer is selectively eliminated by discharged processing agent (etching gas or etching liquid) to form an opening in the insulating layer. As a result, the insulating layer having the opening is formed on a conductive layer, and the conductive layer lying under the insulating layer is exposed on the bottom of the opening. A conductive film is formed in the opening so as to contact with the exposed portion of the conductive layer, and is electrically connected to the conductive layer in the opening of the insulating layer.

Inventors:

Koichiro Tanaka
Masafumi Morisue

Application Number:

JP2007265332A

Publication Date:

December 18, 2013

Filing Date:

October 11, 2007

Export Citation:

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Assignee:

Semiconductor Energy Laboratory Co., Ltd.

International Classes:

H01L21/768; H01L21/28; H01L21/288; H01L21/302; H01L21/3205; H01L21/336; H01L29/786; H01L51/50; H05B33/10

Domestic Patent References:

JP2006054425A

Foreign References:

US20020086535
US6290863
US5271798

Attorney, Agent or Firm:

Nobuyuki Watanabe

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