Title:
Manufacturing method of semiconductor devices
Document Type and Number:
Japanese Patent JP6310816
Kind Code:
B2
Abstract:
Hydrogen plasma processing is performed on a semiconductor wafer having a wiring formed in a region except a photodiode formation region of a pixel part and in a peripheral circuit part, from the side of a face where the wiring is formed. The hydrogen plasma processing uses a plasma etching apparatus which applies high-frequency power to an upper electrode for exciting hydrogen plasma and applies high-frequency power to a lower electrode for supplying hydrogen ions existing in the hydrogen plasma to the semiconductor wafer by electric field drift. Thereby, in the photodiode formation region of the pixel part, hydrogen ions become likely to be supplied by the electric field drift, and, in the region except the photodiode formation region and in the peripheral circuit part, the wiring restricts the movement of hydrogen ions and hydrogen ions become difficult to be supplied.
Inventors:
Kotaro Horikoshi
Ryuki Murata
Ryuki Murata
Application Number:
JP2014171554A
Publication Date:
April 11, 2018
Filing Date:
August 26, 2014
Export Citation:
Assignee:
Renesas Electronics Corporation
International Classes:
H01L27/146; H01L21/265; H01L21/324; H01L21/76; H04N5/335
Domestic Patent References:
| JP2009295799A | ||||
| JP2003282856A | ||||
| JP10233497A | ||||
| JP2009010125A | ||||
| JP2008300630A | ||||
| JP2010165744A | ||||
| JP2001176878A | ||||
| JP2009188038A | ||||
| JP2011243972A | ||||
| JP11330443A | ||||
| JP2010010578A | ||||
| JP2003218121A | ||||
| JP2010287791A | ||||
| JP2003142579A | ||||
| JP2003124189A | ||||
| JP2001094116A |
Attorney, Agent or Firm:
Yamato Tsutsui
Atsushi Sugada
Akiko Tsutsui
Tetsuya Sakaji
Atsushi Sugada
Akiko Tsutsui
Tetsuya Sakaji
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