半導体装置の作製方法 - Semiconductor Energy Laboratory Co., Ltd.

Title:

半導体装置の作製方法

Document Type and Number:

Japanese Patent JP6370048

Kind Code:

B2

Inventors:

Junichi Koizuka
Gyoutoku Shima
Hiraishi Suzunosuke
Kenichi Okazaki

Application Number:

JP2014008328A

Publication Date:

August 08, 2018

Filing Date:

January 21, 2014

Export Citation:

Assignee:

Semiconductor Energy Laboratory Co., Ltd.

International Classes:

H01L21/336; G02F1/1368; H01L21/28; H01L21/316; H01L21/318; H01L21/477; H01L29/786

Domestic Patent References:

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