Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP7402176
Kind Code:
B2
Abstract:
Provided is a semiconductor device manufacturing method comprising: a step of forming a resin layer (13) on a bump formation surface (2A) of a bumped member (2) on which a plurality of bumps (22) have been formed; and a step of irradiating the resin layer (13) with a laser (LB) to remove the resin layer (13) covering the surface of the bumps (22).
Inventors:
Keisuke Shinomiya
Application Number:
JP2020558234A
Publication Date:
December 20, 2023
Filing Date:
November 05, 2019
Export Citation:
Assignee:
Lintec Corporation
International Classes:
H01L21/60; B23K26/36; H01L21/301
Domestic Patent References:
| JP10079362A | ||||
| JP2006156794A | ||||
| JP2017103362A | ||||
| JP2001526464A |
Foreign References:
| WO2016194431A1 |
Attorney, Agent or Firm:
Patent Attorney Corporation Kinoshita Intellectual Property Office
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