Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4101901
Kind Code:
B2
Abstract:
By removing halogen atoms existing on the surface of the silicon layer and in the subsurface thereof so that the concentration of halogen atoms becomes 100ppm or lower and forming an electrode on the resulting silicon layer, the electrode which has a low resistance can be produced, and a highly reliable semiconductor device can be produces as well.
Inventors:
Kotaro Kataoka
Hiroshi Iwata
Masayuki Nakano
Hiroshi Iwata
Masayuki Nakano
Application Number:
JP10867197A
Publication Date:
June 18, 2008
Filing Date:
April 25, 1997
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L21/28; H01L21/285; H01L21/306; H01L21/3205; H01L21/336; H01L21/60; H01L21/768; H01L23/52; H01L29/45; H01L29/78
Domestic Patent References:
| JP8172069A | ||||
| JP8264483A | ||||
| JP9219514A | ||||
| JP10294453A | ||||
| JP7142447A | ||||
| JP4291929A | ||||
| JP4354329A | ||||
| JP8115890A | ||||
| JP61258434A | ||||
| JP8250463A |
Attorney, Agent or Firm:
Shintaro Nogawa
Takaya Koike
Takaya Koike