Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4303709
Kind Code:
B2
Abstract:
To provide a thin film capacitor in which a leakage current can be decreased and a capacitance value can be increased.
An upper electrode 3 and a lower electrode 1 are made of at least one material selected from metal nitride of TiN, Ti, W, WN, Pt, Ir, and Ru. A capacitance insulating film 2 is made of a material selected from at least one of ZrO
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Inventors:
Toshihiro Iizuka
Asae Yamamoto
Asami Toda
Shintaro Yamado
Asae Yamamoto
Asami Toda
Shintaro Yamado
Application Number:
JP2005201425A
Publication Date:
July 29, 2009
Filing Date:
July 11, 2005
Export Citation:
Assignee:
NEC Electronics Corporation
International Classes:
H01L21/8242; H01L27/108; H01L21/822; H01L27/04
Domestic Patent References:
| JP2000114492A | ||||
| JP7161934A | ||||
| JP2001111000A | ||||
| JP200012802A | ||||
| JP2000124424A | ||||
| JP200054134A | ||||
| JP11177085A | ||||
| JP6151751A | ||||
| JP2001127270A | ||||
| JP63236335A | ||||
| JP62159454A |
Attorney, Agent or Firm:
Mitsuhiro Hamada