Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4322706
Kind Code:
B2
Abstract:
A method of manufacturing a semiconductor device, includes selectively forming a mask having an opening on a semiconductor substrate, ion-implanting oxygen to a predetermined depth position of the substrate from a surface of the substrate exposed in the opening of the mask, carrying out annealing with respect to the substrate to oxidize an ion implantation region so that an insulating layer is formed, and forming a first semiconductor element on a region of the semiconductor substrate on the insulating layer, and forming a second semiconductor element on a region other than the region formed with the insulating layer.
Inventors:
Koji Usuda
Shinichi Takagi
Shinichi Takagi
Application Number:
JP2004053395A
Publication Date:
September 02, 2009
Filing Date:
February 27, 2004
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/762; H01L29/786; H01L21/8234; H01L21/8238; H01L21/84; H01L27/08; H01L27/088; H01L27/092; H01L27/10; H01L29/10; H01L31/0328; H01L29/51
Domestic Patent References:
| JP2003258212A | ||||
| JP2004214629A | ||||
| JP2004165197A |
Foreign References:
| US20030104681 |
Attorney, Agent or Firm:
Takehiko Suzue
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Sadao Muramatsu
Ryo Hashimoto