Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4360413
Kind Code:
B2
Abstract:
A method for manufacturing a semiconductor device, includes: a) forming a first semiconductor layer on a semiconductor substrate; b) forming a second semiconductor layer on the first semiconductor layer; c) sequentially etching a part of the second semiconductor layer and a part of the first semiconductor layer so as to form a first groove exposing the first semiconductor layer; d) forming a cavity between the semiconductor substrate and the second semiconductor layer by etching the first semiconductor layer through the first groove under an etching condition in which the first semiconductor layer is more easily etched than the second semiconductor layer; e) forming an embedded oxide film in the cavity; f) etching the embedded oxide film from a lateral surface side thereof so as to form a gap between a peripheral part of the second semiconductor layer and the semiconductor substrate; and g) forming an insulating etching stopper layer in the gap.
Inventors:
Hirokazu Hisamatsu
Application Number:
JP2007084027A
Publication Date:
November 11, 2009
Filing Date:
March 28, 2007
Export Citation:
Assignee:
Seiko Epson Corporation
International Classes:
H01L21/762; H01L21/76; H01L27/12; H01L29/786
Domestic Patent References:
| JP2004336052A | ||||
| JP2005109347A | ||||
| JP2007035701A | ||||
| JP2005354024A |
Attorney, Agent or Firm:
Tetsuya Mori
Yoshiaki Naito
Cui Shu Tetsu
Yoshiaki Naito
Cui Shu Tetsu