Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4723926
Kind Code:
B2
Abstract:
An a-Si film is patterned into a linear shape (ribbon shape) or island shape on a glass substrate. The upper surface of the a-Si film or the lower surface of the glass substrate is irradiated and scanned with an energy beam output continuously along the time axis from a CW laser in a direction indicated by an arrow, thereby crystallizing the a-Si film. This implements a TFT in which the transistor characteristics of the TFT are made uniform at high level, and the mobility is high particularly in a peripheral circuit region to enable high-speed driving in applications to a system-on glass and the like.
Inventors:
Akito Hara
Fumiyo Takeuchi
Kenichi Yoshino
Nobuo Sasaki
Fumiyo Takeuchi
Kenichi Yoshino
Nobuo Sasaki
Application Number:
JP2005179820A
Publication Date:
July 13, 2011
Filing Date:
June 20, 2005
Export Citation:
Assignee:
Sharp Corporation
International Classes:
G02F1/1345; H01L21/20; G02F1/136; H01L21/268; H01L21/336; H01L29/786
Domestic Patent References:
| JP5009794B2 | ||||
| JP9199729A | ||||
| JP7249574A | ||||
| JP2260419A | ||||
| JP61042120A | ||||
| JP61084825A | ||||
| JP5267771A | ||||
| JP8118057A | ||||
| JP3290924A | ||||
| JP2000091231A | ||||
| JP10209069A | ||||
| JP8172049A | ||||
| JP5055259A | ||||
| JP6291038A | ||||
| JP9199441A | ||||
| JP3284828A | ||||
| JP11087730A |
Attorney, Agent or Firm:
Takayoshi Kokubun
Tadahiko Ito
Tadahiko Ito