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Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP5330440
Kind Code:
B2
Abstract:
A method of manufacturing a semiconductor device is disclosed. The method includes forming a third film so as to cover a second pattern, a second mask pattern, and a first film; etching back the third film to form a first sidewall line pattern along a sidewall of the second pattern and to form a first sidewall mask pattern along a sidewall of the second mask pattern; forming a third mask pattern comprising a resist film so as to cover the second mask pattern and the first sidewall mask pattern; and selectively removing the second pattern using the third mask pattern as a mask and thereafter removing the third mask pattern.

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Inventors:
Nagashima Konobu
Application Number:
JP2011064341A
Publication Date:
October 30, 2013
Filing Date:
March 23, 2011
Export Citation:
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Assignee:
Toshiba Corporation
International Classes:
H01L21/28; H01L21/3213; H01L21/336; H01L21/768; H01L21/8247; H01L27/115; H01L29/788; H01L29/792
Domestic Patent References:
JP2010511306A
JP2007305970A
JP2009049338A
Attorney, Agent or Firm:
Patent Business Corporation Sato International Patent Office



 
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