Title:
半導体基板の作製方法
Document Type and Number:
Japanese Patent JP5723204
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor substrate where a silicon layer with high crystallinity is formed to be thick by using a solid-phase epitaxial growth method at a low temperature, and to increase crystal growth speed compared to a conventional vapor phase epitaxial growth method.SOLUTION: A silicon layer is formed on a single crystal silicon layer disposed on a base substrate via an insulating layer so that a needle-like silicon layer which is a portion of an initial stage of deposition and whose arrangement of a crystal face is adjusted to the single crystal silicon layer is grown by a vapor phase epitaxial method. The other portion of the silicon layer is grown by the solid-phase epitaxial method with the needle-like silicon layer as a seed crystal. Thus, a semiconductor substrate with the thick single crystal and crystal silicon layers is manufactured.
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Inventors:
Tomokazu Yokoi
Yoshinobu Asami
Yoshinobu Asami
Application Number:
JP2011097459A
Publication Date:
May 27, 2015
Filing Date:
April 25, 2011
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/02; H01L21/20; H01L27/12
Domestic Patent References:
| JP6132220A |