Title:
基板処理装置及び半導体装置の製造方法
Document Type and Number:
Japanese Patent JP5214774
Kind Code:
B2
Abstract:
Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device that are capable of uniformly heating a substrate while reducing an increase in substrate temperature to reduce a thermal budget. The substrate processing apparatus includes a process chamber configured to process a substrate; a substrate support unit installed in the process chamber to support the substrate; a microwave supply unit configured to supply a microwave toward a process surface of the substrate supported by the substrate support unit, the microwave supply unit including a microwave radiating unit radiating the microwave supplied from a microwave source to the process chamber while rotating; a partition installed between the microwave supply unit and the substrate support unit; a cooling unit installed at the substrate support unit; and a control unit configured to control at least the substrate support unit, the microwave supply unit and the cooling unit.
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Inventors:
Ogawa Unryu
Okuno Masahisa
Tokunobu Akao
Shinji Yashima
Junji Umekawa
Kaichiro Minami
Okuno Masahisa
Tokunobu Akao
Shinji Yashima
Junji Umekawa
Kaichiro Minami
Application Number:
JP2011151654A
Publication Date:
June 19, 2013
Filing Date:
July 08, 2011
Export Citation:
Assignee:
Hitachi Kokusai Electric Co., Ltd.
International Classes:
H01L21/31; H01L21/265; H01L21/268; H01L21/316
Domestic Patent References:
| JP7296990A | ||||
| JP5047468A | ||||
| JP2007258286A | ||||
| JP5242997A |
Attorney, Agent or Firm:
Patent Business Corporation IPS