Title:
MANUFACTURING METHOD OF WIRING STRUCTURE AND WIRING
Document Type and Number:
Japanese Patent JP3526252
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve reliability in migration of main wiring material, such as aluminum, copper and the like.
SOLUTION: A TiN fluoride layer 7 is present on the surface of a TiN film 6 comprising metallic material of high melting point deposited on a silicon oxide film 2 and a contact hole 3, and the main wiring material composed mainly of aluminum and the like is deposited thereon. The TiN fluoride layer 7 can be formed by treating the TiN film 6 by means of SF6 plasma. By this configuration mentioned, wettability of an aluminum alloy compared with the TiN layer free from process subject to plasma treatment, while the TiN fluoride layer 7 remairs conductive on the surface of the TiN film 6. As a result, the grain size of the aluminum alloy can be developed, resulting in improved resistance against migration.
Inventors:
Tamaoki, Norihiko
Application Number:
JP35444199A
Publication Date:
May 10, 2004
Filing Date:
December 14, 1999
Export Citation:
Assignee:
MATSUSHITA ELECTRONICS INDUSTRY CORP
International Classes:
H01L23/52; H01L21/28; H01L21/3205; H01L21/768; (IPC1-7): H01L21/3205; H01L21/768
Attorney, Agent or Firm:
宮井 暎夫