Title:
MANUFACTURING OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5536910
Kind Code:
A
Abstract:
PURPOSE:To improve pressure resistance and yield of a semiconductor element are formed by arranging such that Si rubber is applied on the end of semiconductor element, hardened, treated thermally in vacuum to dryness, moistened then and controlled for surface density. CONSTITUTION:Four layers of pE, nB, pB, nE and each p-n junction of j1...J3 by diffusing impurity on a semiconductor element 10 and after an electrode 12 is thus formed, it is mounted on a tungsten electrode. Next, the end of element 10 is ground to SIGMA-shape, Si rubber 30 is then applied on the said end of element 10, hardened and treated thermally in vaccum to dryness. The rubber 30 is moistened thereafter and controlled for surface charge density, and then the element 10 is sealed in a dry atmosphere. Pressure resistance and yield are thus improved by controlling the surface charge density according to various semiconductor devices.
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Inventors:
MISAWA YUTAKA
SUZUKI HIROSHI
YOKOYAMA TAKASHI
YAO TSUTOMU
WATANABE TOKUO
KOJIMA ISAO
SUZUKI HIROSHI
YOKOYAMA TAKASHI
YAO TSUTOMU
WATANABE TOKUO
KOJIMA ISAO
Application Number:
JP10760578A
Publication Date:
March 14, 1980
Filing Date:
September 04, 1978
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L23/29; H01L21/56; H01L23/31; (IPC1-7): H01L21/56