MANUFSCTURE OF OHMIC ELECTRODE - AGENCY IND SCIENCE TECHN

Title:

MANUFSCTURE OF OHMIC ELECTRODE

Document Type and Number:

Japanese Patent JPS636837

Kind Code:

A

Abstract:

PURPOSE: To obtain an ohmic electrode having heat resistance of approx. 900°C by opening an insulating film and forming a high melting point metal silicide film by a bias sputtering method at least on the exposed silicon surface.

CONSTITUTION: With an SiO2 film 32 as a mask boron ions are implanted to an N-type Si substrate 31 to form a boron-implanted layer 33. After an SiO2 film 34 is formed, it is annealed to density the film 34, and implanted boron is simultaneously activated. A boron-doped p+ type layer surface 35 is exposed by a photoetching method to form a contact hole. After the surface 35 is etched, an Mo silicide film 36 is formed by a high frequency bias sputtering method. Thus, an ohmic electrode having heat resistance of approx. 900°C is obtained.

Inventors:

NAGASAWA EIJI
MOGAMI TORU
OKABAYASHI HIDEKAZU

Application Number:

JP14831186A

Publication Date:

January 12, 1988

Filing Date:

June 26, 1986

Export Citation:

Click for automatic bibliography generation Help

Assignee:

AGENCY IND SCIENCE TECHN

International Classes:

H01L21/28; H01L21/285; (IPC1-7): H01L21/28

Domestic Patent References:

JPS58194334A	1983-11-12
JPS57120337A	1982-07-27
JPS61111525A	1986-05-29

Next Patent: 複層式オフセット輪転機