Title:
MARKING DEVICE FOR SEMICONDUCTOR WAFER
Document Type and Number:
Japanese Patent JPS57113242
Kind Code:
A
Abstract:
PURPOSE:To enable the formation of a large and stable laser mark with a low power device by forming a mark by emitting the laser light continuously at least more than twice. CONSTITUTION:A laser mark is formed on the surface of a semiconductor device by emitting first laser light. In other words, the metal wire 1 on the surface of the semiconductor device and a part of an oxidized film 2 are heated and molten by the laser light to form a laser mark. At this time the periphery of the laser mark is not molten, but becomes high temperature. When second emission of the laser mark is performed, a large laser mark 3' is formed. The mark 3' formed by the second emission is much larger than that produced at the first emission and stable.
Inventors:
TEZUKA AKITOSHI
Application Number:
JP18821280A
Publication Date:
July 14, 1982
Filing Date:
December 29, 1980
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/66; (IPC1-7): H01L21/66