Title:
MASK BLANK FOR ELECTRON BEAM EXPOSURE AND PRODUCTION OF MASK FOR ELECTRON BEAM EXPOSURE
Document Type and Number:
Japanese Patent JP2888211
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To produce a mask only in a laser beam cutting process which decreases the production time, and to improve the dimensional accuracy of a transfer pattern (opening) of a mask and to produce a high-qualify LSI with high production yield by preparing a mask blank in which preliminarlly plural basic openings smaller than the resolution limit are regularly formed.
SOLUTION: A base body comprising a frame 11a and ribs produced by selective etching of a substrate is laminated with a SiO2 layer 3 and a pattern layer 4. The frame 11a has square unit regions 13 divided by ribes, and each unit region 13 has first basic crossshape openings 14 arranged in a matrix state. The basic opening 14 consists of five squares each having L1 side length. Both of the side length L1 and the dimension L2 between adjacent basic openings are smaller than the resolution limit. Second basic L-shape openings 14a are arranged in the corners of the unit region, and third T-shape basic openings 14b, 14c are arranged on the side lines of the unit region. These patterns act to help high accuracy formation of the pattern to be transferred in a short time.
Inventors:
NOZUE HIROSHI
Application Number:
JP29632096A
Publication Date:
May 10, 1999
Filing Date:
November 08, 1996
Export Citation:
Assignee:
NIPPON DENKI KK
International Classes:
G03F1/20; H01L21/027; (IPC1-7): G03F1/16; H01L21/027
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)
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