PURPOSE: To provide the mask for exposure and exposure method capable of transferring all of plural kinds of fine patterns with good resolution relating to the mask for exposure having a phase shift structure and the exposure method using this mask for exposure.
CONSTITUTION: The mask for exposure is composed of a first division mask 10 having the edge emphasis type phase shift structure for exposing hole patterns 1 and a second division mask 20 having a Levenson type phase shift structure for exposing line/spacing patterns 2 at the time of transferring the patterns consisting of the fine hole patterns 1 and the fine line/spacing patterns 2. The same photoresist film is successively exposed by successively using the first division mask 10 and the second division mask 20.
DOI KAZUMASA
NAOE TERUBUMI
