Title:
マスクレイアウト形成方法及びマスクレイアウト
Document Type and Number:
Japanese Patent JP5043482
Kind Code:
B2
Abstract:
A mask layout forming method includes designing an original layout in which a diagonal pattern of a first polygon is repeatedly arranged in a diagonal direction relative to a vertical-axis direction. Opposite edge sides of the diagonal pattern of the first polygon are corrected such that second polygons extending in a horizontal-axis direction are stacked at the opposite edge sides of the diagonal pattern of the first polygon to form a stair-shaped layout. The polygons are fractured in the horizontal-axis direction to provide data associated with the corrected layout to an electron beam exposure system. The diagonal pattern of the first polygon defines an active region and a device isolation layer along a 6F2 cell layout or a 4F2 cell layout.
Inventors:
Can Chun
Nambyeong Subu
Nambyeong Subu
Application Number:
JP2007078268A
Publication Date:
October 10, 2012
Filing Date:
March 26, 2007
Export Citation:
Assignee:
SK hynix Inc.
International Classes:
G03F1/78; G03F1/36; G03F1/68; G03F1/70; H01L21/027; H01L21/8242; H01L27/108
Domestic Patent References:
| JP2005003996A | ||||
| JP2004301892A | ||||
| JP2002198501A | ||||
| JP9034097A | ||||
| JP9293669A | ||||
| JP9293667A |
Attorney, Agent or Firm:
Kunio Ueda
Noriharu Fujita
Kawakami Miki
Noriharu Fujita
Kawakami Miki