Title:
MASK FOR X RAY LITHOGRAPHY
Document Type and Number:
Japanese Patent JP3525617
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a mask for X ray lithography which can easily manufacture a resist pattern having distribution in the resist depth as compared with the conventional case, in an X ray lithography.
SOLUTION: A mask for X ray lithography is provided with a retaining frame 12, an X ray transmission film 13 which transmits X ray very easily and is formed on the retaining frame 12, and an X ray absorbing member 14 formed on the X ray transmission film 13. The X ray absorbing member 14 has a pattern corresponding to a specified pattern of resist material 16 to be formed on the surface perpendicular to the irradiation direction of X ray 11 and has specified distribution of the thickness in the direction parallel to the irradiation direction of the X ray 11. The depth of X ray exposure to resist is controlled by the distribution of the thickness.
Inventors:
Okuyama, Hiroshi
Application Number:
JP7045696A
Publication Date:
May 10, 2004
Filing Date:
March 26, 1996
Export Citation:
Assignee:
SUMITOMO ELECTRIC IND LTD
International Classes:
G21K5/02; B81C1/00; G03F1/22; H01L21/027; (IPC1-7): H01L21/027; G03F1/16; G21K5/02
Attorney, Agent or Firm:
深見 久郎 （外２名）
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