MEMORY ELEMENT AND MEMORY

Title:

MEMORY ELEMENT AND MEMORY

Document Type and Number:

Japanese Patent JP2007294745

Kind Code:

A

Abstract:

To provide a memory element which checks the thermal damage to the memory element to stably perform the repetitive operation.

A memory layer 4 is disposed between two electrodes 3, 6 with an ion source layer 5 containing any element selected among Cu, Ag, Zn, adjacent to the memory layer 4. The memory layer 4 forms memory elements 10 made of an oxide containing at least one kind of elements selected among gold, silver, iridium, ruthenium, rhenium, platinum, palladium, rhodium and osmium, i.e., noble metal elements.

Inventors:

MIZUGUCHI TETSUYA
ARAYA KATSUHISA
KOCHIYAMA AKIRA
YAMADA NAOMI

Application Number:

JP2006122311A

Publication Date:

November 08, 2007

Filing Date:

April 26, 2006

Export Citation:

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Assignee:

SONY CORP

International Classes:

H01L27/10; H01L45/00; H01L49/00

Domestic Patent References:

JP2005197634A	2005-07-21
JP2005216387A	2005-08-11

Attorney, Agent or Firm:

Yoshitsuno Kakuda
Hitoshi Ito

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