Title:
メモリ記憶セルおよびその形成方法
Document Type and Number:
Japanese Patent JP4088613
Kind Code:
B2
Abstract:
A buried plate region for a semiconductor memory storage capacitor is self aligned with respect to an upper portion of a deep trench containing the memory storage capacitor.
Inventors:
Can Quo Chen
Ramachandra Divacarni
See Yi Seung
Ramachandra Divacarni
See Yi Seung
Application Number:
JP2004222267A
Publication Date:
May 21, 2008
Filing Date:
July 29, 2004
Export Citation:
Assignee:
INTERNATIONAL BUSINESS MASCHINES CORPORATION
International Classes:
H01L21/8242; H01L27/108; H01L21/336; H01L27/02
Domestic Patent References:
| JP11177046A | ||||
| JP2003501834A | ||||
| JP11274427A | ||||
| JP2260655A | ||||
| JP11074483A |
Attorney, Agent or Firm:
Hiroshi Sakaguchi
Yoshihiro City
Takeshi Ueno
Yoshihiro City
Takeshi Ueno