Title:
MEMORY TRANSISTOR, NONVOLATILE MEMORY ELEMENT, STACK STRUCTURE OF THE SAME, OPERATION METHOD OF THE SAME, MANUFACTURING METHOD OF THE SAME AND SYSTEM USING ITS NONVOLATILE MEMORY ELEMENT
Document Type and Number:
Japanese Patent JP2008118141
Kind Code:
A
Abstract:
To provide a memory transistor, a nonvolatile memory element, a stack structure of the same, an operation method of the same, a manufacturing method of the same, and a system using the nonvolatile memory element.
There are provided a semiconductor substrate, a tunneling insulation layer on the semiconductor substrate, an electric charge storing layer on the tunneling insulation layer, a blocking insulation layer on the electric charge storing layer, and a gate electrode on the blocking insulation layer, wherein the blocking insulation layer is a memory transistor that surrounds the gate electrode.
Inventors:
LEE CHANG-HYUN
CHOI BYEONG-IN
CHOI BYEONG-IN
Application Number:
JP2007287615A
Publication Date:
May 22, 2008
Filing Date:
November 05, 2007
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
H01L21/8247; H01L27/115; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Masatake Shiga
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro