Title:
混合原子価導電性酸化物を用いたメモリ
Document Type and Number:
Japanese Patent JP2008512857
Kind Code:
A
Abstract:
A multi-level cell memory device, comprising at least one memory element (500, 700) including a first electrode (515), a second electrode (520) , a mixed valence conductive oxide (510, 635, 710) in contact with the first electrode, the mixed valence conductive oxide including a crystalline structure and including mobile oxygen ions (O-), and an electrolytic tunnel barrier (505, 705) in contact with the mixed valence conductive oxide and the second electrode, the electrolytic tunnel barrier having a thickness less than 50 Å. Each memory element is operative to store multiple bits of non-volatile data as a plurality of distinct resistive states that can be non-destructively determined by applying a read voltage pulse across its respective first and second terminals during a read operation. Each memory element is also operative to reversibly switch between the plurality of distinct resistive states by applying a write voltage pulse across its respective first and second terminals during a write operation, the write voltage pulse is operative to generate an electric field in the memory element. The electric field is operative to cause transport of mobile oxygen ions between the mixed valence conductive oxide and the electrolytic tunnel barrier, and the transport is operative to switch one of the plurality of distinct resistive states to another one of the plurality of distinct resistive states.
Inventors:
Linnerson Darrell
Chevalier Christoph Jay.
Kinney Wayne
Lambertson Roy
Longco Steven W.
Sanchez John E. Jr.
Schloss Lawrence
Swab Philip F.S.
Ward Edmund Earl.
Chevalier Christoph Jay.
Kinney Wayne
Lambertson Roy
Longco Steven W.
Sanchez John E. Jr.
Schloss Lawrence
Swab Philip F.S.
Ward Edmund Earl.
Application Number:
JP2007530487A
Publication Date:
April 24, 2008
Filing Date:
September 01, 2005
Export Citation:
Assignee:
UNITY SEMICONDUCTOR CORPORATION
International Classes:
H01L27/10; H01L45/00; H01L49/00
Domestic Patent References:
| JP2005203733A | 2005-07-28 | |||
| JP2004193595A | 2004-07-08 | |||
| JP2003092387A | 2003-03-28 |
Foreign References:
| US20030137869A1 | 2003-07-24 | |||
| US20040159867A1 | 2004-08-19 |
Attorney, Agent or Firm:
Meisei International Patent Office