Title:
炭化珪素質ハニカム構造体の製造方法及び炭化珪素質ハニカム構造体
Document Type and Number:
Japanese Patent JP4528263
Kind Code:
B2
Abstract:
There is provided a method for manufacturing a silicon carbide based honeycomb structure, the method using, as a part of a starting material, a recycled raw material recycled from a recovered material generated in a process for manufacturing the silicon carbide based honeycomb structure and derived from a starting material for a silicon carbide based honeycomb structure; wherein the recycled raw material is pulverized to have an average particle size of 10 to 300 µm. According to the present invention, structure defects such as voids or coarse particles, which have been problems upon manufacturing a silicon carbide based honeycomb structure, are hardly formed, and a silicon carbide based honeycomb structure having excellent strength and uniform heat conductivity can be obtained. In addition, since a once kneaded material is used as a part of a starting material, the time for kneading can be shortened.
Inventors:
Masashi Harada
Shuichi Ichikawa
Aiko Otsuka
Atsushi Kaneda
Yasushi Noguchi
Shuichi Ichikawa
Aiko Otsuka
Atsushi Kaneda
Yasushi Noguchi
Application Number:
JP2005514251A
Publication Date:
August 18, 2010
Filing Date:
September 29, 2004
Export Citation:
Assignee:
Nippon Insulator Co., Ltd.
International Classes:
C04B35/626; B01D39/00; B01D39/20; C04B33/32; C04B35/16; C04B35/195; C04B35/565; C04B35/622; C04B38/00; F01N3/022
Domestic Patent References:
| JP2002356383A | 2002-12-13 | |||
| JP2000302533A | 2000-10-31 | |||
| JPS62207758A | 1987-09-12 |
Attorney, Agent or Firm:
Ippei Watanabe