Title:
METHOD AND APPARATUS FOR EVALUATING OXIDE FILM IN SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH1050783
Kind Code:
A
Abstract:
To provide a method and an apparatus for evaluating an oxide film deposited on a semiconductor substrate easily over a wide area in a short time with high operability.
In a method for evaluating an oxide film 51 deposited on a semiconductor substrate 50 wherein the characteristics of an objective part of the oxide film 51 are evaluated based on an electric signal received from an electrode formed by bringing a mercury 3 into contact with the objective part using a probe 2 for dripping the mercury 3, the probe 2 is moved continuously on the semiconductor substrate 50 while sustaining the state where the mercury 3 of the probe 2 touches the oxide film 51 and the oxide 51 of large area is measured and evaluated continuously.
Inventors:
IKEDA KIYOSHI
Application Number:
JP20683496A
Publication Date:
February 20, 1998
Filing Date:
August 06, 1996
Export Citation:
Assignee:
SONY CORP
International Classes:
G01R1/06; G01N27/00; H01L21/66; (IPC1-7): H01L21/66; G01N27/00; G01R1/06