METHOD AND APPARATUS FOR ION IMPLANTATION

Japanese Patent JPS59121199

A

PURPOSE:To form a source domain and a drain domain symmetrically and to prevent the channeling, by carrying out the ion implantation to a semiconductor substrate tilted a little toward the vertical direction, thereby changing the plane direction of the semiconductor substrate. CONSTITUTION:The wafer 12 used as the semiconductor substrate is supported by the supporting table 13, rotated by rotating the table 13 with the driving means 14, and implanted with required impurity ions by the ion implanting device 10. The supporting table 13 is tilted from the vertical direction by about 7 deg.. The formation of channeling can be prevented, the influence of gate 15 to the mask can be eliminated, and the source domain 16 and the drain domain 17 can be formed in a perfectly symmetrical form.

JPH0657638	PROBLEM TO BE SOLVED: To control a critical temperature of a superconductor thin film by a focused ion beam.
JPH0657640	PROBLEM TO BE SOLVED: To control a critical temperature of a superconductor by ion implantation.
WO/2023/073060	METHOD OF IMPLANTING ATOMS IN A SUBSTRATE AND METHOD OF FORMING A QUANTUM REGISTER

OOTANI OSAMU

JP22630282A

July 13, 1984

December 24, 1982

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HITACHI MICROCUMPUTER ENG
HITACHI LTD

C30B31/22; H01L21/265; (IPC1-7): H01L21/265

Toshiyuki Usuda

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