Title:
OBSERVATION METHOD AND DEVICE FOR VENT HOLE OF SILICON ELECTRODE PLATE FOR PLASMA PROCESSING DEVICE AND SILICON ELECTRODE PLATE FOR PLASMA PROCESSING DEVICE
Document Type and Number:
Japanese Patent JP2023031351
Kind Code:
A
Abstract:
To provide an observation method and device for a vent hole of a silicon electrode plate for a plasma processing device capable of observing an amount of particle adhesion inside the vent hole and processing damage marks and a silicon electrode plate for a plasma processing device.SOLUTION: The method for observing a vent hole penetrating a silicon electrode plate in the thickness direction includes an image generation step for radiating infrared rays from one surface side of the silicon electrode plate and receiving the infrared rays from the other surface side to generate an observation image based on the received infrared rays. In the image generation step, an observation image is acquired by shifting the focal point position of an infrared ray receiving unit in the depth position of the vent hole while the focal point position is made to shift to each depth position.SELECTED DRAWING: Figure 2
Inventors:
NISHIMURA KAZUYASU
TANAKA TERUKI
TANAKA TERUKI
Application Number:
JP2021136784A
Publication Date:
March 09, 2023
Filing Date:
August 25, 2021
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP
International Classes:
H01L21/3065; H01L21/31
Attorney, Agent or Firm:
Masakazu Aoyama
Previous Patent: Radio tag communication device and program
Next Patent: METAL MASK TRANSFER SYSTEM AND METAL MASK TRANSFER METHOD
Next Patent: METAL MASK TRANSFER SYSTEM AND METAL MASK TRANSFER METHOD