Title:
METHOD AND APPARATUS FOR PRODUCING SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPS6465089
Kind Code:
A
Abstract:
PURPOSE:To obtain a high-quality epitaxial growth, layer of a semiconductor at a relatively low temp. by specifying the component of the acceleration energy of an ion beam in the direction perpendicular to the surface of a substrate at the time of projecting the ion beam. CONSTITUTION:A growth region having a susceptor 31 for fixing the substrate and a heater 32 for heating the substrate is enclosed by a liquid nitrogen shroud 28 and the substrate is carried from an adjacent vacuum chamber 30 through a gate valve 29. Molecular rays for growth are supplied by cells 25-27. An ion source 21 is capable of changing the angle between the ion beam and the substrate surface within a 0-10 deg. range by mounting the source via bellows 22 to a port to be mounted with an electron gun for measuring RHEED. The ion beam of the acceleration epitaxial E(eV) is projected in parallel with or at theta incident angle to the substrate surface toward the substrate during the epitaxial growth so that the component Esintheta of the acceleration energy of the ion beam in the direction perpendicular to the substrate surface is confined to <=10eV.
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Inventors:
HAYAKAWA TOSHIRO
SUYAMA NAOHIRO
TAKAHASHI KOUSEI
KONDO MASAFUMI
SUYAMA NAOHIRO
TAKAHASHI KOUSEI
KONDO MASAFUMI
Application Number:
JP22093387A
Publication Date:
March 10, 1989
Filing Date:
September 03, 1987
Export Citation:
Assignee:
SHARP KK
International Classes:
C30B23/08; H01L21/203; (IPC1-7): C30B23/08; H01L21/203
Attorney, Agent or Firm:
Aoyama Ryo (2 outside people)