Title:
METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JPH03261142
Kind Code:
A
Abstract:
PURPOSE: To free a patterned surface of fine dust particles by freezing the surface with dust and melting the ice so that dust can be carried off.
CONSTITUTION: A patterned surface 3 of a substrate 1 such as reticle, mask and wafer is washed with water. While moistened, the surface is cooled to freeze so that fine dust particles 4 on the substrate, which have not been washed away, may be caught in ice. The is melted by a high-temperature heater or hot water, and it runs with dust. Then the substrate is dried. In this manner, the surface 3 is freed of fine dust particles that cannot be removed by washing.
Inventors:
MATSUBARA DAISUKE
Application Number:
JP5788090A
Publication Date:
November 21, 1991
Filing Date:
March 12, 1990
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/304; H01L21/00; (IPC1-7): H01L21/00; H01L21/304
Attorney, Agent or Firm:
Aoki Akira (4 outside)