Title:
METHOD FOR CONTROLLING FINE CRYSTAL GRAIN DISTRIBUTION OF THIN FILM OF GLASS DOPED WITH FINE CRYSTAL
Document Type and Number:
Japanese Patent JPH05119362
Kind Code:
A
Abstract:
PURPOSE:To easily control the grain size distribution of a semiconductor, etc., of the thin film of the glass doped with a semiconductor, etc. CONSTITUTION:The thin film of the glass dispersed with the compd. or simple substance of a uniform grain size in SiO2. glass is obtd. by placing the compd. or polycrystal of the simple substance on a target consisting of the SiO2. and executing sputtering by using gas, such as Ar. The thin film of the glass is then irradiated with an electron beam. Semiconductors, such as CdTe, CdS, CdSe, ZnS, ZnTe, ZnSe, PbI2, InP, CdSnP2, CdSxSe1-x, ZnGeAs2, GaAs, Si, Si-Ge, InSb, and CuCl, and in addition, magnetic materials, dielectrics, superconductors, and metals are possible as the compd. or the simple substance. The fine crystals are made into the same grain size and spherical shape for >=20 second irradiation time of the electron beam at >=100kV. This thin film is utilizable as an optical shutter, optical switch and optical high-speed response element. The thin film of the glass doped with the fine crystals of the magnetic materials. high-temp. superconductors, etc., is applicable as a transparent magnet or magnetic shield, etc., while maintaining high tranparency.
Inventors:
HIRAO KAZUYUKI
NASU HIROYUKI
NASU HIROYUKI
Application Number:
JP32007691A
Publication Date:
May 18, 1993
Filing Date:
October 28, 1991
Export Citation:
Assignee:
JAPAN RES DEV CORP
International Classes:
C03B8/00; C03B8/04; C03B19/14; C03C3/06; G02F1/35; G02F1/355; (IPC1-7): C03B8/04; C03C3/06; G02F1/35
Attorney, Agent or Firm:
Nakamura Takashi