To provide a method for controlling the size of a resist pattern capable of controlling the dimensional change of the pattern with high accuracy and good reproducibility due to the change of the simple processing condition.
The method for controlling the size of the resist pattern comprises a step of forming the resist film 12 having a predetermined pattern on a silicon wafer 10, a step of forming a chemical layer 18 by coating a chemical which reacts with the film 12 by a spin coating method on the wafer 10 formed with the film 12, and a step of changing the size of the pattern by reacting the chemical of a resist retaining part 14 with that of the layer 18. Thus, the coating conditions of coating the chemical by the spin coating method are controlled to control the change amount of the size of the pattern.
NOZAKI KOJI
OZAWA YOSHIKAZU
KON JUNICHI
YANO EI
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