Title:
METHOD OF CRYSTAL GROWTH OF INDIUM ALUMINUM NITRIDE SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP3876323
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a manufacturing method of semiconductor crystal capable of being used for blue, ultraviolet LEDs, blue, ultraviolet LDs, and high speed, high frequency, and high power transistors or the like; and also to provide a manufacturing method of a semiconductor crystal system having high polarizability capable of being used for blue, ultraviolet LEDs, blue, ultraviolet LDs, and high speed, high frequency, and high power transistors or the like.
SOLUTION: In the manufacturing method of indium aluminum nitride semiconductor crystal, indium aluminum nitride represented by a general formula InxAl1-xN is grown on gallium nitride or indium gallium nitride by a molecular beam epitaxy growing method using as a nitrogen source a nitrogen radical obtained by decomposing stock gas containing nitrogen with RF plasma.
Inventors:
Masataka Higashiwaki
Application Number:
JP2004078231A
Publication Date:
January 31, 2007
Filing Date:
March 18, 2004
Export Citation:
Assignee:
National Institute of Information and Communications Technology
International Classes:
C30B29/38; H01L21/205; C30B23/08; (IPC1-7): H01L21/205; C30B29/38
Domestic Patent References:
| JP2003192497A | ||||
| JP9027640A |
Attorney, Agent or Firm:
Hiroshi Kobayashi
Eiji Katayama
Junko Kobayashi
Takayuki Hirose
Eiji Katayama
Junko Kobayashi
Takayuki Hirose
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