PURPOSE: To end development at a prescribed dissolved film thickness arrival point by detecting the ambient temperature of a processed film on a substrate successively in the development of the processed film and calculating the dissolved film thickness of resist, and controlling the development processing.
CONSTITUTION: When development is indicated after the resist film on a wafer 10 is irradiated with an electron beam or light, a control circuit 1 opens a valve 2-1 to spout a developer 5-1 fed from a tank 4-1 through a pump 301 over the wafer 10 through a nozzle 7-1 and a motor 8 rotates a wafer chuck 9. The control circuit 1 measures the development temperature by a temperature sensor 11 through a temperature measuring circuit 12, and reads a dissolving speed R1 out of a memory 13 on the basis of the temperature. A similar measurement is taken a fixed time Δt later to calculate a dissolving speed R2. This is repeated to calculate a dissolved film thickness R by integrating RiΔt, and the calculated film is compared with initial film thickness R0; and the development is stopped when R=R.
HARADA KATSUYUKI
MIYOSHI KAZUNARI
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