Title:
METHOD AND DEVICE FOR TREATING SILICON IN WET CHEMICAL MANNER BY USING ETCHANT
Document Type and Number:
Japanese Patent JP3909321
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method and a device for treating silicon in a wet chemical manner by using an etchant containing water, nitric acid and hydrofluoric acid.
SOLUTION: The etchant is activated by introducing a nitrogen oxide (NOx) to the etchant before the etchant is used first for treating silicon in the wet chemical manner. The device for carrying out the method has (a) a first vessel 1 for treating silicon in the wet chemical manner by using the etchant 4 comprising water, nitric acid and hydrofluoric acid, (b) a second vessel 2 containing the new etchant 5 and (c) a connecting conduit 8 between the first and second vessels conducting the nitrogen oxide (NOx) generated by the wet chemical treatment in the first vessel to the second vessel. The etchant is activated without adding silicon, and the ratio of water in the etchant is not changed because reaction water is not generated. An etching rate, in its turn, a silicon wafer is kept constant.
Inventors:
Maximilian Stadler
Gunter Schwab
Helmut Franke
Gunter Schwab
Helmut Franke
Application Number:
JP2003355312A
Publication Date:
April 25, 2007
Filing Date:
October 15, 2003
Export Citation:
Assignee:
Siltronic AG
International Classes:
C23F1/08; C09K13/08; H01L21/306; C23F1/24; H01L21/00; H01L21/308; (IPC1-7): H01L21/308; C23F1/08; C23F1/24
Domestic Patent References:
| JP7014815A | ||||
| JP2000331982A | ||||
| JP2001156040A | ||||
| JP11026425A | ||||
| JP6104246A |
Attorney, Agent or Firm:
Toshio Yano
Toshiomi Yamazaki
Takuya Kuno
Einzel Felix-Reinhard
Reinhard Einsel
Toshiomi Yamazaki
Takuya Kuno
Einzel Felix-Reinhard
Reinhard Einsel