PURPOSE: To conduct uniform surface treatment to a plurality of substrates by changing the position of optimum surface-treatment conditions in a reaction pipe with time.
CONSTITUTION: The position of optimum surface-treatment conditions in the direction of a gas flow in a reaction chamber 1 is changed with time. The time when vapor phase species are exposed to heat, light, plasma, etc., and the time after the mixing of a plurality of gases are controlled by a means such as a change with time of a gas flow rate in the reaction chamber 1, and the state in which the position in the reaction chamber 1 of optimum surface- treatment conditions of a film formation, etc., is vibrated with time is formed. Accordingly, the conditions of film formation at the positions of a plurality of substrates disposed in the reaction chamber 1 are levelled, and the dispersion of the film thickness and film quality of thin-films shaed on a plurality of the substrates 3 can be reduced.
MIKATA YUICHI
YONEKURA AKEMICHI
