Title:
METHOD AND DEVICT FOR PRODUCTION OF SILICON CRYSTAL
Document Type and Number:
Japanese Patent JPH04175289
Kind Code:
A
Abstract:
PURPOSE:To prevent crystal defects caused by oxygen in a crown process for forming a head part of silicon single crystal by keeping silicon seed crystal and/or a fixing jig warm or heating. CONSTITUTION:Silicon seed crystal 28 is immersed in a silicon melt 22 obtained by melting silicon and a dopant packed into a crucible 12 by a resistance heating element 14, diameter of silicon single crystal 26 is reduced, the silicon seed crystal is pulled up and the diameter of crystal is enlarged to the objective diameter of the crystal to form a heat part. In the formation of the head part, the single crystal 26 is pulled up while dropping the temperature of the heating element to the same temperature in forming a barrel part or, simultaneously with the drop in temperature, while heating a metal resistance heating element 20 set in a seed holder 18 to 1,350-1,370 deg.C.
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Inventors:
SEKINE TERUYUKI
NISHIZAKI KATSUMI
KANEDA HIROSHI
NISHIZAKI KATSUMI
KANEDA HIROSHI
Application Number:
JP30572190A
Publication Date:
June 23, 1992
Filing Date:
November 09, 1990
Export Citation:
Assignee:
KAWASAKI STEEL CO
International Classes:
C30B15/00; C30B15/20; (IPC1-7): C30B15/00; C30B15/20
Attorney, Agent or Firm:
Nobuto Watanabe (1 person outside)