PURPOSE: To form a wax material layer that does not destruct a semiconductor element at die-bonding and is good in heat radiation by enabling obtaining a wax material of constant thickness so as to prevent forming of an electrical short circuit, at a DH joint part, caused by creeping up of the wax material to a side surface of the semiconductor element.

CONSTITUTION: In a die-bonding method where a semiconductor laser element 10, having an electrode 4 formed at a protruding part of a p-type clad layer 5 on a die-banding surface side, is, attached to a heat sink 1 with a wax material 2 in between, a process is included, wherein a spacer 3 is assigned an a die-bonding surface of the heat sink 1, and a groove, whose depth is greater than the height of the protruding part of p-type clad layer 5 added with the electrode 4, and its width is greater than the diameter of the electrode 4 but smaller than the element width of the semiconductor laser element 10, is attached to the spacer 3, and then the groove is filled with the wax material 2.