Title:
METHOD FOR DRIVING STATIC INDUCTION TRANSISTOR AND CIRCUIT THEREFOR
Document Type and Number:
Japanese Patent JP3655049
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To drive a static induction transistor(SIT) at a low ON voltage and with a small switching loss by applying the forward bias voltage of a value smaller than the value of the built-in voltage of a pn junction composed of a gate area and a drift area between a gate and a source at the time of conducting the SIT in a forward direction.
SOLUTION: By adding a forward bias between the gate and the source, since the width of a depletion layer generated in the junction of a first conductive drift area and a second conductive gate area is narrowed, a conducting area is widened and the ON voltage at the time of forward direction conducting is reduced. Also, in the range of the time 11-20 μsec, the gate voltage VG is set to the value larger than 0 V and smaller than the built-in voltage. For instance, since the built-in voltage is 2.7 V, the voltage VG is set to 2.5 V. At the time, the SIT maintains an ON state. Then, since a part between a gate electrode and a source electrode is biased in the forward direction, the ON voltage is lowered.
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Inventors:
Takayuki Iwasaki
Toshiyuki Ohno
Tsutomu Yao
Toshiyuki Ohno
Tsutomu Yao
Application Number:
JP13319597A
Publication Date:
June 02, 2005
Filing Date:
May 23, 1997
Export Citation:
Assignee:
Renesas Technology Corp.
International Classes:
H02M1/08; H01L29/80; H03K17/56; (IPC1-7): H01L29/80; H02M1/08; H03K17/56
Domestic Patent References:
| JP64042992A | ||||
| JP63269578A | ||||
| JP8106263A | ||||
| JP9121025A | ||||
| JP9017994A | ||||
| JP9008645A | ||||
| JP7030396A |
Other References:
Charles E.Weitzel, et.al.,"Silicon Carbide High-Power Devices",IEEE TRANSACTIONS ON ELECTRON DEVICES,1996年10月,Vol.43, No.10,pp.1732-1741
CHANG-WOO KIM, et.al.,"Bipolar-Mode Static Induction Transistor: Experiment and Two-Dimensional Analysis",IEEE TRANSACTIONS ON ELECTRON DEVICES,1990年 9月,Vol.37, No.9,pp.2070-2075
CHANG-WOO KIM, et.al.,"Bipolar-Mode Static Induction Transistor: Experiment and Two-Dimensional Analysis",IEEE TRANSACTIONS ON ELECTRON DEVICES,1990年 9月,Vol.37, No.9,pp.2070-2075
Attorney, Agent or Firm:
Yamato Tsutsui
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