Title:
METHOD FOR ETCHING SILICONE MATERIAL
Document Type and Number:
Japanese Patent JPH1150271
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To prevent etching roughness, to maintain working quality of etching and to continuously use an etching soln. by adding Mg to an etching soln. composed of an alkali soln. contg. Cu. SOLUTION: Mg is added to an etching soln. contg. Cu. This etching soln. is composed of an alkali soln., and the added Mg forms a hydroxide. The hydroxide of Mg is hard to dissolve in water. Then, at the time of forming the hydroxide, Cu can be taken in. Furthermore, the hydroxide can suppress the diffusion of Cu into the surface of a silicone material after its formation. In this way, the precipitation of Cu into the surface of the silicone material can be prevented, by which the roughening of the etched face can be prevented. By the addition of Mg, the influence of Cu from the etching soln. can be eliminated, so that etching can continuously be executed. It is preferable that the amt. of Mg to be added is higher than that of the Cu content in the alkali soln.
Inventors:
TANAKA HIROSHI
ABE KICHIJI
INOUE KAZUYUKI
ABE KICHIJI
INOUE KAZUYUKI
Application Number:
JP21595297A
Publication Date:
February 23, 1999
Filing Date:
July 25, 1997
Export Citation:
Assignee:
DENSO CORP
TOYOTA CENTRAL RES & DEV
TOYOTA CENTRAL RES & DEV
International Classes:
C23F1/40; H01L21/308; (IPC1-7): C23F1/40; H01L21/308
Attorney, Agent or Firm:
Yoshiyasu Takahashi