To solve a problem of degrading in light extraction efficiency of a nitride semiconductor light-emitting device, which problem is caused by optical reflection or a crushed layer produced in machining a substrate that is hard to process, thereby enhancing the light extraction efficiency of the nitride semiconductor light-emitting device.

A method for fabricating the nitride semiconductor light-emitting device including a substrate and a nitride semiconductor layer which contains a light-emitting layer stacked on the substrate, includes a first step of removing at least part of the nitride semiconductor layer by laser so as to form a separation groove thereon; a second step of subjecting the side face of the nitride semiconductor layer along the separation groove to wet-etching treatment; and a third step of dividing the substrate along the separation groove.