To provide a method for fabricating a microwave circuit and a radio frequency circuit in a silicon on a sapphire substrate.
An improved method for fabricating a silicon on sapphire structure and/or device is disclosed. In one suitable embodiment, a single silicon oxide layer is interposed between a silicon layer and a sapphire layer by attaching the silicon oxide layer onto the silicon layer through growth or deposition and then attaching the sapphire layer to the oxide layer through wafer bonding. In another embodiment, a first silicon oxide layer is attached to the silicon layer through growth or deposition. Subsequently, a second silicon oxide layer is attached to the sapphire layer by deposition, for example. Thereafter, the first silicon oxide layer and the second silicon oxide layer are bonded by wafer bonding technology.
SHI LEATHEN
WANG LI-KONG
Next Patent: RESIN COVER GLASS OF ELECTRONIC DEVICE