Title:
METHOD FOR FABRICATING SINTERED COMPACT OF ALUMINUM NITRIDE
Document Type and Number:
Japanese Patent JPH05330964
Kind Code:
A
Abstract:
PURPOSE: To provide a method for fabricating a aluminum nitride sintered compact capable of obtaining a circuit substrate and a package, etc., free from deterioration of insulation and having high reliability by eliminating deterioration of insulation due to metal Al produced by decomposition of AIN and prevent production of a substance such as Al2O3 different in coefficient of thermal expansion when the aluminum nitride sintered compact is subjected to laser beam machining.
CONSTITUTION: A sintered compact consisting essentially of aluminum nitride is subjected to laser beam machining and the heated at ≥800°C in a non- oxidizing atmosphere containing ≥50vol.% nitrogen and a metal Al produced by laser beam machining is nitrided.
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Inventors:
SHIMODA KOHEI
NATSUHARA MASUHIRO
UKEKAWA JIHEI
NAKADA HIROHIKO
MOTOKI KENSAKU
NATSUHARA MASUHIRO
UKEKAWA JIHEI
NAKADA HIROHIKO
MOTOKI KENSAKU
Application Number:
JP16215492A
Publication Date:
December 14, 1993
Filing Date:
May 28, 1992
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
B23K26/40; B23K26/38; C04B35/58; C04B35/581; C04B41/91; H01L23/12; H05K3/00; (IPC1-7): C04B41/91; B23K26/00; C04B35/58; H01L23/12; H05K3/00
Attorney, Agent or Firm:
Katsunari Nakamura (1 person outside)