Title:
METHOD OF FORMING ALUMINUM OXIDE THIN FILM
Document Type and Number:
Japanese Patent JP2015135841
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To form a thinner aluminum oxide thin film on a surface of a semiconductor layer formed of InAlAs in a state of being provided with a high insulation property.SOLUTION: At a step S101, a semiconductor layer 101 formed of InAlAs is formed. At a step S102, a surface of the semiconductor layer 101 is oxidized to form an oxide layer 105 on the surface of the semiconductor layer 101 (a first step). At a step S103, the oxide layer 105 is heated, and a surface of the oxide layer 105 is processed by an oxygen plasma 121 to decompose and completely remove InOincluded in the oxide layer 105 (a second step). At a step S104, the oxide layer 105 is heated, and the surface of the oxide layer 105 is processed by the oxygen plasma 121 to decompose and completely remove AsOincluded in the oxide layer 105 and to make the oxide layer 105 be configured of AlO106.
Inventors:
EL MOUTAOUAKIL AMINE
MATSUZAKI HIDEAKI
MATSUZAKI HIDEAKI
Application Number:
JP2014005611A
Publication Date:
July 27, 2015
Filing Date:
January 16, 2014
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
H01L21/316; H01L21/336; H01L29/78
Domestic Patent References:
| JP2001308319A | 2001-11-02 | |||
| JPH09172163A | 1997-06-30 |
Foreign References:
| WO2009119103A1 | 2009-10-01 | |||
| US5798555A | 1998-08-25 |
Other References:
JPN6016041586; Ｎａｒａｙａｎ Ｃｈａｎｄｒａ Ｐａｕｌ， 外４名: 'Ｏｘｉｄａｔｉｏｎ ｏｆ ＩｎＡｌＡｓ ａｎｄ Ｉｔｓ Ａｐｐｌｉｃａｔｉｏｎ ｔｏ Ｇａｔｅ Ｉｎｓｕｌａｔｏｒ ｏｆ ＩｎＡｌＡｓ／ＩｎＧａＡｓ Ｍｅｔａｌ Ｏｘｉｄｅ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ' Ｊａｐａｎｅｓｅ Ｊｏｕｒｎａｌ ｏｆ Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ Ｖｏｌ． ４４， Ｎｏ． ３, 2005, ｐｐ． １１７４-１１８０
Attorney, Agent or Firm:
Masaki Yamakawa
Shigeki Yamakawa
Yuzo Koike
Shigeki Yamakawa
Yuzo Koike
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