Title:
METHOD OF FORMING CARBON POLYMER FILM USING PLASMA CVD
Document Type and Number:
Japanese Patent JP2007256950
Kind Code:
A
Abstract:
To form a thin-film hard mask which has superior characteristics of optical properties and/or mechanical properties by plasma polymerization of an organic monomer.
Provided is a method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer CαHβXγ, (wherein α and β are natural numbers of 5 or more; γ is an integer including zero; X is O, N or F) having a boiling point of about 20°C to about 350°C which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas and CO2gas or H2gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the semiconductor substrate by plasma polymerization of the gas, thereby reducing extinction coefficient at 193 nm and increasing mechanical hardness.
COPYRIGHT: (C)2008,JPO&INPIT
Inventors:
MORISADA YOSHINORI
GOUNDAR KAMAL K
YAMAGUCHI MASASHI
MATSUKI NOBUO
NA KYU TAE
BAEK EUN KYUNG
Application Number:
JP2007069782A
Publication Date:
October 04, 2007
Filing Date:
March 19, 2007
Assignee:
ASM JAPAN KK
SAMSUNG ELECTRONICS CO LTD
International Classes:
G03F7/11; H01L21/31; H01L21/312
Attorney, Agent or Firm:
Sumio Takeuchi
Akira Hori
