Title:
METHOD FOR FORMING CURRENT CONSTRICTION LAYER, AND CURRENT CONSTRICTION TYPE SURFACE EMITTING LASER
Document Type and Number:
Japanese Patent JP3020167
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To easily provide a method for forming a current constriction layer in a semiconductor device in a simple process, and a current bottleneck type surface emitting laser with the current constriction layer obtained by this method.
SOLUTION: A surface emitting laser device includes a clad layer 3 composed of an n-type clad layer 6, an active layer 7, a p-type clad layer 8, a planar tunnel junction 9, and an n-type clad layer 10 formed sequentially on a first reflecting mirror 1 and a first electrode 2. A second reflecting mirror 4 and a second electrode 5 are formed on the clad layer 3. The second electrode 5 is diffused through heat treatment into the inside of the adjoining n-type clad layer 10. In this step, a current constriction layer 11, in which a tunnel effect is extinguished, is formed at a position in the tunnel junction 9 corresponding to the second electrode 5.
Inventors:
Iga, Kenichi
Sekiguchi, Shigeaki
Koyama, Fumio
Miyamoto, Tomoyuki
Sekiguchi, Shigeaki
Koyama, Fumio
Miyamoto, Tomoyuki
Application Number:
JP1999000083562
Publication Date:
January 14, 2000
Filing Date:
March 26, 1999
Export Citation:
Assignee:
Tokyo, Inst Technol OF.
International Classes:
H01S5/00; H01L29/68; H01S5/183; (IPC1-7): H01S5/183; H01L29/68
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