Title:
METHOD FOR FORMING DIFFUSE BARRIER LAYER IN SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2003273348
Kind Code:
A
Abstract:
To provide a method for preventing dopant boron from being diffused from a gate electrode to a channel area and a semiconductor device.
A silicon nitride barrier layer for preventing the diffusion of in-gate electrode layer impurity is formed by the chemical reaction of tetrachlorosilane and ammonia between a gate electrode layer and a gate dielectric layer with a high dielectric coefficient.
Inventors:
SHII-CHUN SON
Application Number:
JP2002063102A
Publication Date:
September 26, 2003
Filing Date:
March 08, 2002
Export Citation:
Assignee:
PROMOS TECHNOLOGIES INC
International Classes:
H01L29/423; H01L21/318; H01L21/8238; H01L27/092; H01L29/49; H01L29/78; (IPC1-7): H01L29/78; H01L21/318; H01L21/8238; H01L27/092; H01L29/423; H01L29/49
Attorney, Agent or Firm:
Tadahiko Ito (2 outside)