Title:
METHOD FOR FORMING MASK PATTERN
Document Type and Number:
Japanese Patent JP2002107957
Kind Code:
A
Abstract:
To provide a method for forming a mask pattern in an easy process so as to increase the etching selection ratio for a material to be etched (such as a metal film to be etched) comparable with a hard mask.
The method includes a process of forming a photosensitive resin film containing silicon on the substrate to be treated, exposing and developing to form a photosensitive resin pattern and a process of exposing the photosensitive resin pattern to the plasma of a discharge gas containing oxygen.
Inventors:
FUKUMIZU HIROYUKI
TONOYA JUNICHI
TONOYA JUNICHI
Application Number:
JP2000294311A
Publication Date:
April 10, 2002
Filing Date:
September 27, 2000
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
G03F7/075; G03F7/095; G03F7/40; H01L21/027; (IPC1-7): G03F7/40; G03F7/075; G03F7/095; H01L21/027
Attorney, Agent or Firm:
Takehiko Suzue (6 outside)