To suppress overhang of an intermediate layer in a contact opening part by a method wherein, after the intermediate layer is formed on an insulation layer before a contact hole is formed in the insulation layer, the contact hole penetrating through the intermediate layer and insulation layer is formed.

After an active area 2 being a part of an active element is formed on a semiconductor substrate 1 and SiO2 3 is deposited on the entire face as an insulation layer, Ti 7 and TiN 8 are formed. After the substrate is annealed, a pattern 5 of a contact hole is formed employing resist 4. By use of this as a mask, Ti 7, TiN 8 and the SiO2 insulation film 3 are vertically processed to form a contact hole 6. After the resist 4 is removed, W 9 is deposited to embed a hole 6. As a thickness of the W film formed in a sidewall portion of the contact hole is about half the radius of the contact hole and further a contact area is small, a stress like separation is not applied. Therefore, an intermediate layer is not required to form in the contact hole and it is possible to suppress overhang of the intermediate layer in a contact opening portion.